收藏本站
Typical Characteristics T A = 25°C unless otherwise noted
1000
200
100
10 μ s
100 μ s
100
STARTING T J = 25 o C
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
1ms
10ms
10
STARTING T J = 150 o C
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
0.1
1
1
10 100
V DS , DRAIN TO SOURCE VOLTAGE (V)
300
0.001
0.01 0.1
t AV , TIME IN AVALANCHE (ms)
1
Figure 5. Forward Bias Safe Operating Area
180
NOTE: Refer to Fairchild Application Notes AN7515 and AN7517
Figure 6. Unclamped Inductive Switching
Capability
180
PULSE DURATION = 80 μ s
V GS = 10V
V GS = 7V
150
120
90
DUTY CYCLE = 0.5% MAX
V DD = 15V
T J = 175 o C
150
120
90
V GS = 6V
T C = 25 o C
60
30
T J = 25 o C
T J = -55 o C
60
30
V GS = 5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
0
3.0
3.5
4.0 4.5 5.0 5.5 6.0
6.5
0.0
1.0 2.0 3.0 4.0 5.0
6.0
18
17
16
15
14
13
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
V GS = 10V
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
3.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
V GS = 10V, I D =33A
0.5
0
20
40 60
80
-80
-40
0 40 80 120
160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
?2010 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB2532_F085 Rev. A
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB2614 MOSFET N-CH 200V 62A D2PAK
FDB2710 MOSFET N-CH 250V 50A D2PAK
FDB28N30TM MOSFET N-CH 300V 28A D2PAK
FDB3502 MOSFET N-CH 75V 6A TO-263AB
FDB3652_F085 MOSFET N-CH 100V 61A D2PAK
FDB3672_F085 MOSFET N-CH 100V 44A D2PAK
FDB3860 MOSFET N-CH 100V 6.4A D2PAK
FDB390N15A MOSFET N-CH 150V 27A D2PAK
相关代理商/技术参数
FDB2532_SN00238 制造商:FAIRCHILD 功能描述:curtis stampoff
FDB2532-CUT TAPE 制造商:FAIRCHILD 功能描述:FDB2532 Series 150 V 0.075 Ohms N-Channel PowerTrench Mosfet - TO-263AB
FDB2552 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB2552_F085 功能描述:MOSFET N-Chan PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB2570 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB2572 功能描述:MOSFET N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB2572_Q 功能描述:MOSFET N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB-25P 制造商:Hirose 功能描述: